带电粒子注入硅的辐照损伤模拟研究

Study on simulation of radiation damage of the charged particles implanted silicon

利用SRIM软件计算模拟不同质量的带电粒子射入硅的射程、能量损失、硅损伤情况。结果表明,入射带电粒子在硅中分布的最大浓度位置位于其投影射程处,且随粒子质量的增加而减少;入射带电粒子的质量与硅的质量比近似小于1.8时,入射带电粒子损失给电子的能量与反冲硅原子损失给电子的能量之比>1,否则小于1;电离能损随入射带电粒子质量的增加而减少;声子能损随入射带电粒子质量的增加而增加;入射带电粒子在硅中产生的移位和空穴随入射离子质量的增加而增加较快,而替位碰撞增加缓慢。

By the process of SRIM,we can simulate the ion range,loss of energy,Silicon target damage by the different quality of charged particles implanted silicon.The results indicate that,the largest concentration of in-cidence of charged particles is located at the proj ection range in the silicon,and is smaller with the increase of the particle quality.The particle of mass to the mass of Silicon ratio is smaller than 1.8,the charged particle loss to electron energy to recoil of the silicon atoms loss to the energy of the electrons ratio is greater than 1 or less than 1 .Ionization energy loss decreases,and phonon energy loss increases with the increase of incidence of charged particles of mass.Total displacements and total vacancies increase rapidly,and replacement collisions increase slowly with the increase of incidence of charged particles of mass.