逆阻型绝缘栅双极晶体管研究进展

Research and Development of Reverse Blocking Technology for IGBT

逆阻型绝缘栅双极型晶体管(RB-IGBT)是一种新型的IGBT器件,它是将IGBT元胞结构与耐高压的二极管元胞结构集成到同一个芯片上。RB-IGBT相比于传统的IGBT串联一个二极管的模式,具有总通态压降低、成本低、总功耗低和电路结构简单等诸多优点。自从被提出以来,RB-IGBT在结构设计和加工工艺方面不断得到改进,其性能不断提升,使得RB-IGBT拥有更为广阔的应用前景。综述了RB-IGBT的发展历程和双向耐压原理,重点阐述了不断改进的RB-IGBT结构和国际上采用的加工工艺。针对热预算、工艺难度和工艺成本等,分析了不同工艺技术的优缺点,重点探讨了工艺的实现方式。对RB-IGBT的发展趋势进行了分析和预测,认为混合隔离技术和漂移区的改进将是下一代RB-IGBT的发展方向。

The reverse blocking-insulated gate bipolar transistor（ RB-IGBT） is a novel IGBT device which integrates the conventional IGBT and high voltage diode into one single chip. Compared with the traditional IGBT which is connected with a diode, RB-IGBT has the advantages of low on-state voltage,low cost,low power consumption,simple circuit structure and so on. Since it is proposed,RB-IGBT has been greatly improved in the structure design,processing technology and the performance,which expands its application prospect. The development process of RB-IGBT and the principle of bidirectional voltage are presented,and the continuous improvement of the RB-IGBT structure and the processing technology adopted in the world are expounded emphatically. According to the heat budget,process difficulty and process cost,the advantages and disadvantages of different process technologies are analyzed,and the implementation way of process are emphatically discussed. The development tendency of RB-IGBT is analyzed and proposed,the hybrid isolation technology and the improvement of drift region are considered to be the development directions in the next generation of RB-IGBT.