纳瓦级低功耗CMOS基准源研究与实现

The Design of Nanowatt Low-power CMOS Reference Circuit

工作在亚阈值区的2个MOS管栅压差值与温度成正比,基于这一理论,本文设计了一种纳瓦级功耗的带隙基准源电路.整体电路包括启动电路,一个纳安级电流源电路,一只双极晶体管和一个与绝对温度成正比(PTAT)的电压发生器.与传统CMOS带隙基准源相比,本文采用的结构具有更低的功耗.电路性能基于SMIC 0.18μm混合CMOS工艺仿真验证,结果显示此电路在1.8V电压下工作时,整体功耗120nW.

Based on the theory that When two MOSFETs operate in sub-threshold region,their gate-voltage＇s difference is proportional to the absolute temperature,this paper proposed a nonawatt-powerd bandgap reference circuit.The circuit consists of a nano-ampere current reference circuit,a bipolar transistor,and a proportional-to-absolute-temperature（PTAT）voltage generator.Compared with conventional CMOS bandgap reference circuit,the proposed circuit has a lower power.The technique has been simulated in SMIC＇s 0.18μm mixed-signal CMOS process,and the result showed that when the circuit operated at 1.8Vsupply,the power is 120 nW.