摘要
拉曼原位表征(Raman in situ characterization)就是在不破坏样品的情况下利用拉曼光谱实时监测变化过程,以表征样品在真实环境下的结构性能变化或记录样品在整个过程中的实时信息。在器件的工作时,原位检测化学结构、物理结构的变化,有利于深入了解器件微观结构与光电性能间的关系,帮助我们优化器件结构,提高器件性能。本文主要针对有机光电器件,总结原位观察生长、老化、带电状态的特点和规律,探讨了原位拉曼光谱在有机光电器件原位表征中的应用和发展潜力。
Raman in situ characterization refers monitoring the process using Raman spectroscopy without destroying the sample in real time,and then characterizes the structure and performance change on site orrecord the real-time information throughout the process.Under operating conditions of the devices,examining the chemical and physical structure changes exactly in place where it occurs,will help to insight the relationship between microstructure and photoelectric properties of devices,and then optimizes the structure to improve the performance.This review summarizes the in situ observation of film growth,degradation,charged state and their characteristics in organic optoelectronic devices,and finally makes a point on the applications and potentiality of in situ Raman spectroscopy in organic optoelectronic device.
作者
王聪
周学宏
王蓉
刘琳琳
解增旗
马於光
WANG Cong ZHOU Xue-hong WANG Rong LIU Lin-lin XIE Zeng-qi MA Yu-guang(State Key Laboratory of Luminescent Material and Devices ,South China University of Technology Institute of material South China University of Technology ,Guangzhou 510641 ,China)
出处
《光散射学报》
北大核心
2016年第3期195-202,共8页
The Journal of Light Scattering
基金
国家自然科学基金(51303057
91233113
21334002
51373054
51473052
21174042)
科技部973计划(2013CB834705
2015CB655003)
中央高校业务费(2015ZZ010)
广东省创新团队(201101C0105067115)
关键词
拉曼光谱
原位表征
有机光电
电掺杂态
Raman spectroscopy
in situ characterization
organic optoelectronic
electricaldoping