基于电容分段反馈的绝缘栅双极型晶体管门极驱动

IGBT gate drive technology based on capacitance feedback in stage

将绝缘栅双极型晶体管(IGBT)关断过程分解为多个阶段,对IGBT关断过程中电压上升和电流下降采取分阶段电容耦合反馈从而独立控制dv/dt和di/dt,实现电磁辐射和关断电压反峰的双重约束。基于Pspiece模型仿真出不同反馈电容及门极电阻下的开关损耗和关断电压反峰,绘制出了相互之间的关系曲线,同时提出了一套优化系统参数的计算方法。选取英飞凌FS400R07A1E3_H5型IGBT模块,设计出了具备电容反馈的驱动电路,实验结果表明:在通过IGBT电流为400A的情况下,采取电容反馈的驱动电路将反峰电压降低80V左右,模块温升有所降低,验证了本文方法的正确性。

The Insulate Gate Bipolar Transistor（IGBT）turn-off process is decomposed into multiple stages.The capacitive coupling feedback is used in the rise of voltage and the fall of current in the IGBT turn-off process to control dv/dt and di/dt independently and to achieve double restraints of EMI and inverse peak voltage.The Pspiece model is used to simulate switching loss and inversed peak voltage under different feedback capacitances and gate resistances,the corresponding curve is drawn and a set of calculation methods for the optimization of the system parameters is put forward.The experiment is based on Infineon FS400R07A1E3_H5IGBT modules and the drive circuit with capacitive feedback is designed.Experimental results indicate that when the current through IGBT is400 A,the peak inverse voltage decreases by 80 V and the module temperature decreases in the feedback capacitive drive circuit.The correctness of the proposed theory is verified.