GaSb晶片钝化工艺对抛光表面的影响

Effect of Passivating Process on GaSb Polished Surface

锑化镓(GaSb)作为常用的III-V型半导体材料,因其易于氧化的性质而限制了其应用效果,而硫钝化是一种常见而有效的应对手段。该文选取了硫化铵溶液,对化学机械抛光后的晶片表面进行处理,以研究硫钝化工艺中钝化时间对抛光面的影响。实验结果通过原子力显微镜(AFM)和X线光电子能谱(XPS)进行了表征,研究发现,经硫化铵溶液处理后,与Ga相比,Sb的硫化程度更完全,且该程度会随着硫化时间的延长而逐渐加大。另外,处理时间长会加重GaSb晶片表面的腐蚀,使其表面起伏加剧,表面粗糙度增大。

As a common III-V compound semiconductor material,gallium antimonide（GaSb）was restricted in application due to its easy oxidation.Among all solutions,the sulfuric passivation is a common and efficient one.We chose（NH4）2S solution to study the effect of passivating process on chemical mechanical polished surface.The results were characterized by atomic force microscopy（AFM）and X-ray photoelectron spectroscopy（XPS）.After passivation,Sb was further passivated compared to Ga,while the passivation level escalated when the processing period was lengthened.On the other side,longer passivation time bring severer wafer etching,which led to a higher surface roughness.