一种准确的MOS晶体管统计模型方法

An Accurate Statistical Model for MOS Transistors

这是一种用于MOS晶体管的统计模型建模方法,基于物理模型,考虑相关性的全局偏差和非相关性的局部偏差,分别进行模型化。首先建立Die内非相关性局部偏差的模型,然后采用FPV和BPV相结合的方法,针对全局偏差的分布,建立MOSFET器件准确的统计模型,可以覆盖不同器件尺寸,不同偏压下的电特性参数的统计分布情况,借助Monte-Carlo仿真,得到器件统计模型参数。通过华虹宏力0.13μm工艺实测数据与该模型仿真结果的对比,两者能够精确符合,为模拟电路设计和成品率预测提供一种快速简便的方法。

This paper presents a new statistical model for MOSFET devices, based on physical model, explicitly accounts for correlated global variations and uncorrelated local variations of statistical parameters. Firstly established model for uncorrelated variations, then combined the FPV and BPV method, extracted MOSFET statistical parameters via Monte-Carlo simulation, this model is applicable to any type and dimension of MOS device, under all voltage bias. The model is validated by 0.13 ~ m technology of HHGrace, the accuracy of device electrical performance variation modeling is accepted, this provides an accurate and simple way to model and simulate the statistical variation of analog circuit performances.