摘要
In this work, a novel memristive SRAM cell is designed using seven transistors and one memristor（7T1M）. In this 7T1 M SRAM cell, the non-volatile functionality is achieved by adding a single memristor and a transistor to the design of a volatile SRAM cell. The designing of the 7T1 M SRAM cell also introduces VCTRL which allows bidirectional current flowing through the memristor, instead of relying on complementary input sources which would require more design components. In this article, memristive SRAM cells available from the literature are simulated using the same simulation environment for a fair comparison. Simulations show that the7T1 M SRAM cell has the least power consumption against other memristive SRAM cells in the literature. The7T1 M SRAM cell operates with an average switching speed of 176.21 ns and an average power consumption of2.9665μW. The 7T1 M SRAM cell has an energy-delay-area product value of 1.61, which is the lowest among the memristive SRAM cells available in the literature.
In this work, a novel memristive SRAM cell is designed using seven transistors and one memristor（7T1M）. In this 7T1 M SRAM cell, the non-volatile functionality is achieved by adding a single memristor and a transistor to the design of a volatile SRAM cell. The designing of the 7T1 M SRAM cell also introduces VCTRL which allows bidirectional current flowing through the memristor, instead of relying on complementary input sources which would require more design components. In this article, memristive SRAM cells available from the literature are simulated using the same simulation environment for a fair comparison. Simulations show that the7T1 M SRAM cell has the least power consumption against other memristive SRAM cells in the literature. The7T1 M SRAM cell operates with an average switching speed of 176.21 ns and an average power consumption of2.9665μW. The 7T1 M SRAM cell has an energy-delay-area product value of 1.61, which is the lowest among the memristive SRAM cells available in the literature.
