电化学C-V法研究掺硅GaAs材料载流子浓度的分布

Study on Carrier Concentration Distribution in Silicon-doped GaAs Materials Using Electrochemical C-V Technique

电化学C-V法是当前测量化合物半导体载流子浓度纵向分布的非常重要的方法。本文采用电化学C-V法研究了MOCVD生长的掺硅GaAs多层薄膜的载流子浓度的面分布和纵向分布,并对测试结果进行分析。研究表明电化学C-V法测得的载流子浓度数据可以为研究掺硅GaAs半导体材料载流子浓度工艺优化和改进提供重要指导依据。

Electrochemical capacitance-voltage （ ECV ） profiler is a convenient method to characterize the depth profile of carrier concentration of compound semiconductor. The distribution of carrier concentration in MOCVD grown silicon-doped GaAs multilayer film was studied using ECV technique. The results showed that the carrier concentration result by ECV is an important guide for doping process optimization and improvement in Si-doped GaAs semiconductor materials.