期刊文献+

酸性镀铜添加剂对电沉积循环伏安曲线成核环的影响 被引量:10

Influence of Additives in Acidic Copper Electroplating Bath on Nucleation Loop of Cyclic Voltammetric Curve
下载PDF
导出
摘要 金属电沉积的循环伏安(CV)曲线上的成核环可以用于分析添加剂对电沉积的影响及其作用机理。以常用的3种酸性镀铜添加剂为例,探讨了不同添加剂下成核环的形成特点,并从其成核环的位置以及构成成核环的电流曲线来探讨添加剂对铜沉积的影响及其机理。结果表明:当成核环分别位于不加添加剂的阴极电位和阳极电位方向时,添加剂对金属电沉积分别具有阻化和促进作用;阴极扫描方向电流密度Jb和回扫的阳极电流密度Ja是CV曲线成核环的两个特征参数,添加剂作用下的Ja和Jb与不加添加剂的接近,表明添加剂通过吸附-脱附机理影响金属的沉积,反之表明添加剂在电极表面参与化学反应。 With three kinds of typical acidic copper plating additives as examples,the formation characteristics of nucleation loop of cyclic voltammetric curves(CV) were explored,and the location and I-V curves of nucleation loop were used to study the influences and mechanism of additives on the deposition of Cu.Result showed that when the nucleation loop was located at directions of cathode potential and anode potential without additives,adding additives had acceleration effect or inhibition effect on the metal electrodeposition,respectively.At the cathode scan direction,the current density of cathodic scans J_b and return anodic J_n were the two characterized parameters of a nucleation loop.The J_b and J_a with the effect of additives were closed to those without additives,which indicated that the effect mechanism of additive for copper electrodeposition was adsorption-desorption.Conversely,the results would present that the additives participated in chemical reactions on the electrode surface.
作者 辜敏 吴亚珍
出处 《材料保护》 CAS CSCD 北大核心 2016年第9期19-22,7,共4页 Materials Protection
基金 CMDDC国家重点实验室自主项目(2011DA105287-ZD201202) 重庆市科技计划项目(cstc2013jcyjys90001)资助
关键词 成核环 添加剂 循环伏安曲线 电沉积 nucleation loop additive cyclic voltammetric curve copper electrodeposition
  • 相关文献

参考文献30

  • 1Garrido M E H, Pritzker M D. Vohammetric study of the in- hibition effect of polyethylene glycol and chloride ions on copper deposition [ J ]. Journal of Electrochemical Society, 2008,155 (4) : D332- D339.
  • 2Jovic V D, Jovic G M. Copper electrodeposition from a cop- per acid baths in the presence of PEG and NaC1 [ J ]. Jour- nal of the Serbian Chemical Society, 2001,66 (11/12) : 935 - 952.
  • 3Kim J J,Kim S K,Kim Y S. Catalytic behavior of 3-mercap- to- 1- propane sulfonic acid on Cu electrodeposition and its effect on Cu film properties for CMOS device metallization [ J ]. Journal of Electroanalytical Chemistry, 2003,542 ( 1 ) : 61-66.
  • 4Willey M J, West A C. SPS adsorption and desorption during copper electrodeposition and its impact on PEG adsorption [ J]. Journal of the Electrochemical Society,2007,154 (3) : D156 - D162.
  • 5Walker M L, Richter L J, Moffat T P. Competitive adsorption of PEG, C1-, and SPS/MPS on Cu:Au in situ ellipsometric study [ J ]. Journal of the Electrochemical Society,2006,153 (8) :C557 - C561.
  • 6Grujicic D, Pesic B. Electrodeposition of copper: the nuclea- tion mechanisms [ J ]. Electrochimica Acta, 2002,47 ( 18 ) : 2 901-2 912.
  • 7Kelly J J, West A C. Copper deposition in the presence of polyethylene glycol - I. Quartz crystal microbalance study [J ]. Journal of the Electrochemical Society, 1998, 145 (10) :3 472-3 476.
  • 8Jin Y, Kondo K, Suzuki Y, et al. Surface adsorption of PEG and C1- additives for copper damascene electrodeposition [ J ]. Electrochimical and Solid State Letters, 2005,8 ( 1 ) : C6 - C8.
  • 9Akolkar R, Landau U. A time - dependent transport- kinetics model for additive interactions in copper interconnect metal- lization [ J ]. Journal of the Electrochemical Society, 2004, 151(11) : C702- C711.
  • 10Wu B H, Wan C C, Wang Y Y. Void-free anisotropic deposi- tion for IC interconnect with polyethylene glycol as the single additive based on uneven adsorption distribution [ J]. Jour- nal of Applied Electrochemistry, 2003,33 (9) : 823 - 830.

同被引文献83

引证文献10

二级引证文献10

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部