微结构半导体中子探测器研制

Development of a Micro-structured Semiconductor Neutron Detector

微结构半导体中子探测器具备探测效率高、响应时间快、体积小等优点,性能相对传统平面型半导体中子探测器有本质提升。采用蒙卡方法分析了器件微结构参数对沟槽型微结构探测器的性能影响规律,并结合工艺条件制备出沟槽宽度26μm,沟槽间距13μm,沟槽深度22μm,灵敏区面积1.8×1.8 cm^2的微结构探测器。该探测器在10 V的反向偏压下,漏电流仅1.24×10^(-7)A/cm^2,优于国外研究组报道的漏电流特性。利用同位素α源开展了带电粒子探测性能测试,所制备微结构探测器可实现241Am源α粒子探测。在外加0 V偏压时,微结构探测器即可获得与电子学噪声区分明显的241Am源α粒子能谱。本工作证明了微结构探测器对带电粒子具有良好的探测性能。

Micro - structured semiconductor neutron detectors （MSND） are attractive for their high detection efficiency, fast response, and compact size. MSND design offers a viable solution to the efficiency limitations of traditional planar detectors. The influence of micro - structured features on detecting performance is investigated by Monte - Carlo simulation. A MSND device is fabricated with 26 μm trench width, 13 μm trench gap, 22 μm trench depth, and 1.8 × 1.8 cm^2 sensitive area. The device shows a leakage current density of merely 1.24×10^-7 A/cm^2@ 10 V. The MSND device can successfully detect alpha particles when 0V bias is applied. This work demonstrates that the MSND device is available to detect ionizing particles, which is crucial for neutron detecting.