不同制备方法下银薄膜的光电学性质比较

Comparison of optical and electrical properties of Ag films with different preparation method

分别用磁控溅射和热蒸发的方法,在空白石英基片上室温沉积厚度300 nm的银薄膜样品,研究不同制备方法对样品的微观结构和光电学性质的影响.微观结构利用X-射线粉末衍射仪和扫描电镜观测,光电学性质应用分光光度计及Van der Pauw方法检测.结果表明,制备方法不同引起银薄膜样品的晶粒择优取向不同,磁控溅射制备的银薄膜(Sputtering Ag)的结晶性能比热蒸发制备的银薄膜(Evaporation Ag)结晶性能好;两种方法制备的银薄膜的光学反射率随波长的变化规律基本相同,在可见光和红外光区域,Evaporation Ag的光学反射率比Sputtering Ag稍高,且均超过95%;薄膜的电阻率都接近银块体材料的电阻率,但Sputtering Ag的电阻率为2.6μΩ·cm比Evaporation Ag的电阻率(2.8μΩ·cm)小.

Ag films with the normal thickness （d） 300 nm were deposited on quartz substrates by magnetron sputtering and thermal evaporation technique. The effects of different preparation methods on the structure, optical and electrical properties were investigated. The microstructure was studied by X- ray diffraction and scanning electron microscopy. Optical and electrical properties were measured by spectrophotometer and Van der Pauw method, respectively. The results show that Ag films have different preferred orientations with the different preparation methods. The crystallization performance of Sputtering Ag is better than that of Evaporation Ag. The variation of reflectance with wavelength of Sputtering Ag is the same as the Evaporation one. in the visible and infrared optical region the reflectance of Evaporation Ag higher than that of Sputtering Ag which are both beyond 95%. The resistivity of two samples are almost the same as the Ag block, however, the resistivity of Sputtering Ag with 2.6μΩ.cm is smaller than that of Evaporation Ag which is 2.8 μΩ.cm.