摘要
以ICP-501为刻蚀设备,以C_4F_8和SF_6为刻蚀气体,以Xe气为辅助气体,以lift-off方法得到的铬掩模对966线/mm的光栅进行刻蚀。结果表明,在选定的工艺条件下,刻蚀光栅结构与理论设计较为符合,衍射效率也接近于理论设计。
In this paper, the author introduced with ICP -501 the process of etching 966 line/mm grating by Cr mask taken from the lift -off method, taking CaF8 and SF6 as etching gas, Xe gas as auxiliary gas. The experimen- tal results show that the etching grating structure and the diffraction efficiency were both very close to the theoretical design.
出处
《重庆科技学院学报（自然科学版）》
CAS
2016年第5期113-116,共4页
Journal of Chongqing University of Science and Technology：Natural Sciences Edition
基金
福建省科技重大专项"激光白光模组的研制及其在激光投影仪中的应用开发"(2012HZ002)
关键词
感应耦合
等离子体
铬掩模
光栅
深刻蚀
inductive
coupled plasma
Cr mask
grating
deep - etching
