高温超导长带缓冲层的缺陷分析

Defects analysis on buffer layer of high temperature superconducting long tape

实现二代高温超导产业化的关键之一是提高良率。作者在实践中发现,影响带材良率的一个重要因素是存在于带材上的缺陷。对二代高温超导带材中缺陷的研究应该是个一个重要的课题,但是还没有见到过有关的报道,该文对带材中大量出现的典型缺陷进行SEM和EDS分析发现,发现缺陷处有大量C元素,且该C元素存在于抛光基带和缓冲隔离层之间的界面上。由此,推测缺陷产生的根源是抛光带表面的有机物污染,并得到了证实。据此,在抛光工艺中的过滤系统得到了改进,最终良率得到了提高。同时,作者认为,使用SEM-EDS对缺陷进行元素分析,是二代带材开发生产中,对带材缺陷进行快速分析的一种可行方法。

High yield is key important commercial success of 2nd -generation high temperature superconductor（HTS） tape. In practice, we found that the defects existing in the tape reduce the yield greatly and it should be given a serious study, but it has not been reported yet to our best knowledge. In this paper, we studied on a type of typical defect. SEM/EDS found that the defect material contained a large number of carbon element and was between the polished metal surface and the buffer layer, which suggested that the origin of the defects was some kind of organic pollution on the surface of polished metal substrate tape. This deduction was proved to be right by further verification. According to this finding, we improved our filtering system and overall improved our yield. This study also shows SEM/EDS is an effective tool for fast defects analysis in commercial production/development of HTS tape.