低压水射流辅助激光刻蚀加工多晶硅工艺参数的优化

Optimization of Process Parameters of Low-Pressure Water-Jet Assisted Laser Etching Crystalline Silicon

利用低压水射流辅助激光刻蚀加工技术对多晶硅进行刻蚀加工,通过正交试验分析了激光脉宽、频率、输入电流和水射流速度对加工表面质量的影响,得到了最终优化工艺参数。结果表明:最终优化工艺参数为低压水射流速度24m·s^(-1)、激光脉宽1.1ms、频率40Hz、电流180A,此时槽体截面锥度、表面粗糙度、截面深度分别为1.2°,2.63μm,1.88mm,槽体表面质量较好,边缘无开裂、无熔渣、无重铸层等缺陷。

Crystalline silicon was etched by low-pressure water-jet assisted laser etching technique. The effects of laser pulse width, frequency, input current and water-jet velocity on the machined surface were analyzed by orthogonal experiment and the ultimate optimum process parameters were obtained. The results show that the ultimate optimum process parameters were listed as follows： the low-pressure water-jet velocity of 24 m. s-1, the laser pulse width of 1.1 ms, the frequency of 40 Hz and the current of 180 A; When machined with this process,the cross-sectional taper, surface roughness and cross-sectional depth of the notch were 1.2°, 2.63μm and 1.88 mm respectively, and the notch surface quality was relatively good without edge burst, slag, recast layer and other defects.