玻璃微流检测芯片厚胶光刻温度条件的平衡优化

Optimizing of the Temperature of Glass Microfluidic Chip Thick Photoresist Lithography Process

采用正性光刻胶AZ 4620进行玻璃微流检测芯片的厚胶光刻制备,试验了各工艺阶段不同的温度参数条件对光刻胶浮雕面形、光刻胶与玻璃基质的粘附性、光刻胶在刻蚀液中的耐受时间、刻蚀速率和最大刻蚀深度等因素的影响。结果表明,软烘温度直接影响曝光显影工艺质量;后烘温度对显影效果有一定影响;坚膜温度对光刻胶浮雕面形、耐受时间有较大影响;而刻蚀环境温度直接影响着刻蚀速率、刻蚀深度和刻蚀面形效果。经平衡优化后,得出了理想的温度参数选取方案。

Use positive photoresist AZ 4620 for thick resist photolithography of glass microfluidic detection chip preparation. Test different temperature parameters influence in various stages of the soft bake, post exposure baking, hard baking, and etching conditions on the surface of the photoresist, adhesion of the photoresist and the glass matrix, and the endurance time of the photoresist etching solution, the etching rate and the maximum etching depth and other factors. The results show that the soft-bake temperature directly affects the lithography process quality, post exposure baking temperature affects pacification a little, bard baking temperature affects photoresist relief face and withstand time, the etching ambient temperature directly affects the etch rate, etch depth and etch surface effect.