全烧结型SiC功率模块封装设计与研制（英文）

Packaging Consideration and Development for Fully Sintered SiC Power Module

针对功率模块高可靠性、宽工作温度范围(-60oC^200oC)的应用特点,研制了一种基于全烧结技术的无键合线、无底板、紧凑型平面SiC功率模块,讨论了SiC模块封装设计及低电感柔性PCB互连技术;为了提高功率模块的可靠性及耐高温性能,采用低温银烧结技术替代传统钎焊焊接工艺,所研制功率模块搭载了SiC JFET和SiC SBD芯片组。测试结果表明,所研制的SiC功率模块具有良好的开关性能。

Aiming to meet the requirements for high reliability and operating temperature of-60 ℃ to 200 ℃, it investigated an advanced packaging design for developing a SiC-based planar power module with fully sintering technologies. The key features of the SiC power module result from the wire-less, baseplate-less, fully-sintered, compact half-bridge power switch module. The packaging considerations and flexible PCB with low parasitic inductance in this SiC-based power module were discussed. In order to improve the reliabilities and operating temperature, the low temperature sintering technology of Ag nanoparticles was selected as the alternative joining technology for assembling the designed power modules that accommodated SiC JFETs and SiC Schottky diodes. The preliminary experiment demonstrates that the designed power module with fully Ag sintering technology can achieve the electrical function of switching-on and switching-off.