4H-SiC栅氧氮化工艺优化

Nitridation Process Optimization of 4H-SiC Gate Oxidation

为了改善SiC MOS电容氧化膜的质量和界面态密度,采用正交试验法考察了温度、压力、时间以及一氧化氮气流量等主要氮化工艺参数对4H-SiC MOS电容栅氧特性的影响,发现温度是影响栅氧特性最关键因素。优选出栅氧的最佳氮化工艺条件,并找到氮化工艺条件对击穿电压和界面态密度的影响规律。

In order to improve the quality of Si O2 film and interface state density of SiC MOS capacitor, the impact of nitridation pr℃ess parameters on the properties of gate oxide was discussed by orthogonal experimental method, which included temperature, pressure, time and NO gas flow,etc. The results demonstrated that temperature was the most critical factor that influenced the gate oxidation.The promising nitridation condition of gate oxide was optimized, and the law which the nitridation conditions effected on breakdown voltage and interface state density was found.