摘要
介绍了1 700 V SiC SBD器件的结构设计、制造工艺、静态特性测试及可靠性摸底试验。通过模拟仿真得到了最佳的漂移区结构和器件结构;针对器件制造工艺中的钝化和金属化两项关键工艺进行原理分析和优化;对器件进行了正向和反向静态参数测试,表明器件耐压水平超过1 700 V,正向电流密度为118 A/cm^2;最后对器件进行了可靠性摸底试验,结果显示20只器件均通过了100个循环的温度冲击试验及168 h的高温反偏试验。
It presented the structure design, manufacture technology and static performance test of 1 700 V SiC SBD devices. The epitaxy material structure and device structure were obtained by simulation,two key pr℃esses including passivation and metalation were analyzed and optimized. Forward and reverse static performances of the devices were tested, and the test results indicated that the bl℃king voltage was over 1 700 V and the current density was 118 A/cm2. In addition, all the devices passed the 100-cycle temperature sh℃k test and 168 h high-temperature reverse bias.
出处
《大功率变流技术》
2016年第5期51-54,共4页
HIGH POWER CONVERTER TECHNOLOGY
基金
国家863计划(SS2014AA052402)
