基于平面肖特基二极管的W波段检波器

W band detector based on planar Schottky diode

肖特基二极管技术为常温下毫米波信号的检测提供了有效的解决方案。它具有极低的寄生电容和级联电阻,可用于该频段的倍频器、混频器和检波器当中。相比于Galey Cell和热辐射测定器(Bolometer),基于肖特基二极管的直接检波技术具有低噪声、高反应率和常温使用的特点。本文介绍了一种基于波导结构的零偏置肖特基二极管检波器,采用E面探针传输波导基模电磁波,通过阻抗匹配实现微带线到二极管的耦合。测试结果表明,在-30 d Bm输入功率下:电压反应率的峰值可达8 900 V/W;在75 GHz^105 GHz的频率范围内,电压反应率在1 000 V/W以上。

Schottky diodes technology provides an efficient solution for millimeter wave detection under room temperature. It offers low parasitic capacitance and series resistance when used as mixers, multipliers and detectors. Some Schottky detectors can operate under room temperature and have an extremely fast response compared with other detectors, such as micro-bolometers and Golay cells. A zero biased waveguide detector based on Schottky diode is presented. It utilizes an E-plane probe as a transition from waveguide to micro-strip line, and couples the signal to the diode by impedance matching. The measurement results show that： with a -30dBm input power, the circuit can achieve a peak voltage responsivity around 8900V/W, and over 1000V/W from 75GHz to 105GHz.