摘要
A series of FeCo-based thin films were pre- pared by magnetron sputtering without applying an induced magnetic field. The microstructure, electrical properties, magnetic properties and thermal stability of FeCo, FeCoSiN monolayer thin film and [FeCoSiN/SiNx]n multilayer thin film were investigated systematically. When FeCo thin film was doped with Si and N, the resis- tivity and soft magnetic properties of the obtained FeCo- SiN thin film can be improved effectively. The coercivity （He）, resistivity （p） and ferromagnetic resonance frequency （fr） can be further optimized for the [FeCoSiN/SiNx]n multilayer thin film. When the thickness of FeCoSiN layer and SiNx layer is maintained at 7 and 2 nm, the He, p andfr for [FeCoSiN/SiNx]n multilayer thin film are 225 A·m^-1 392 μΩ·cm^-1 and 4.29 GHz, respectively. In addition, the low coercivity of easy axis （Hoe ≈ 506 A·m^-1） of [FeCoSiN/SiNx]n multilayer thin film can be maintained after annealing at 300℃ in air for 2 h.
A series of FeCo-based thin films were pre- pared by magnetron sputtering without applying an induced magnetic field. The microstructure, electrical properties, magnetic properties and thermal stability of FeCo, FeCoSiN monolayer thin film and [FeCoSiN/SiNx]n multilayer thin film were investigated systematically. When FeCo thin film was doped with Si and N, the resis- tivity and soft magnetic properties of the obtained FeCo- SiN thin film can be improved effectively. The coercivity （He）, resistivity （p） and ferromagnetic resonance frequency （fr） can be further optimized for the [FeCoSiN/SiNx]n multilayer thin film. When the thickness of FeCoSiN layer and SiNx layer is maintained at 7 and 2 nm, the He, p andfr for [FeCoSiN/SiNx]n multilayer thin film are 225 A·m^-1 392 μΩ·cm^-1 and 4.29 GHz, respectively. In addition, the low coercivity of easy axis （Hoe ≈ 506 A·m^-1） of [FeCoSiN/SiNx]n multilayer thin film can be maintained after annealing at 300℃ in air for 2 h.
基金
financially supported by the National Basic Research Program of China(No.2012CB933103)
the National Natural Science Foundation of China(Nos.51171158, 51371154 and 51301145)
the Natural Science Foundation of Fujian Province of China(No.2014J05009)
