摘要
研究电子束蒸发ITO过程中,氧流量对制备的ITO薄膜形貌以及电阻率的影响,并分析了其影响的机理.结果表明,在保持温度、真空度、转速和生长速率不变的条件下,氧流量为2sccm时,制备的ITO薄膜最优,其电阻率为2.2×10^(-4)Ω·cm,在450~460nm处的透过率超过98%,折射率为1.7.
Effect of oxygen flow on the morphologies and resistivity of ITO thin films evaporated by Ebeam are investigated in this study. The effect of related mechanism is also discussed. With the same temperature, vacuum, rotate speed, growth rate, optimal ITO thin films are evaporated using the oxygen flow of 2sccm. The resistance of the optimal ITO thin films is 2.2 ×10^-4Ω·cm. The transmittance of the optimal ITO thin films is 98% under the wavelength range of 450-460nm. The refractive index of the optimal ITO thin films is 1.7.
作者
刘晓燕
任远
刘久澄
刘宁炀
张康
黄朝辉
陈志涛
LIU Xiaoyan REN Yuan LIU Jiucheng LIU Ningyang ZHANG Kang HUANG Zhaohui CHEN Zhitao(Guangdong Institute of Semiconductor Industrial Technology, Guangzhou 510650, China)
出处
《材料研究与应用》
CAS
2016年第3期167-170,共4页
Materials Research and Application
基金
广东省创新团队(2013C067)
广东省科技计划项目(2016B070701023)
广东省重大科技专项(2014B010119003
2015B010112002)
广东省应用型科技研发专项(2015B010129010
2015B010134001
2015B010132004)
广东省科研基础条件建设专题(2016GDASPT-0313
2016GDASPT-0219)
关键词
氧流量
电子束蒸发
ITO
电阻率
透过率
oxygen flow
E-beam evaporation
ITO
resistivity
optical transparency
