CMOS IC失效机理与老炼频率的关系探讨

Discussion on the Relationship between the Failure Mechanism of CMOS IC and Burn-in Frequency

从老炼试验的原理、CMOS IC的失效机理和功耗等几个方面对CMOS IC的失效机理与老炼频率的关系进行了探讨。通过分析发现,动态老炼的效果与频率的高低的关系不大。希望此结果对老炼方案的编制和老炼试验的实施起到一定的参考作用。

The relationship between the failure mechanism of CMOS IC and bum-in frequency is discussed from the aspects of the principle of burn-in test, the failure mechanism of CMOS IC and the power consumption. Through the analysis, it is found that the effect of dynamic burn-in test has little relationship with the level of frequency. And it is hoped that this result can be used as a reference for the compilation of bum-in test program and the implementation of burn-in test.