摘要
比较了两种不同特性蓝宝石抛光液的化学机械平坦化(CMP)性能。在蓝宝石CMP过程中,针对抛光液pH值、硅溶胶磨料粒径以及抛光液中的化学添加剂(如螯合剂和表面活性剂)的作用进行了研究,以比较材料去除速率和表面形貌。分析表明,pH值和磨料粒径是影响蓝宝石材料去除率的主要因素,螯合剂和表面活性剂分别有助于提高蓝宝石的去除速率和降低表面粗糙度。研究结果表明,低pH值、小磨料粒径和以化学作用为主的蓝宝石抛光液具有良好的CMP性能。
The chemical mechanical planarization（CMP）performances of two sapphire slurries with different characteristics were compared.The functions of the slurry pH value,silica sol abrasive particle size and the chemical additives of the slurry（such as the chelating agent and surfactant）during the sapphire CMP were investigated to compare the material removal rate and surface morphology.The analysis shows that the pH value and abrasive particle size are the main factors affecting the sapphire material removal rate,and the chelating agent and surfactant are helpful to increase the removal rate and decrease the surface roughness of the sapphire,respectively.Therefore,the research results indicate that the chemically dominant sapphire slurry of the low pH value and small abrasive particle size has a good CMP performance.
出处
《微纳电子技术》
北大核心
2016年第11期757-762,共6页
Micronanoelectronic Technology
基金
国家中长期科技发展规划02科技重大专项资助项目(2009ZX02308-003
2014ZX02301003-007)
河北省青年自然科学基金资助项目(F2015202267)
河北省自然科学重点资助项目(ZD2016123)
天津市自然科学基金资助项目(16JCYBJC16100)
