晶体硅太阳电池漏电检测与修复

Detection and repair of crystalline silicon solar cell leakage

通过红外热成像无损检测技术拍摄晶体硅太阳电池表面的热分布图,来确定电池漏电的位置。结合金相显微镜、扫描电子显微镜等分析仪器发现一种新的漏电类型,由多晶硅太阳电池表面附着密集的腐蚀坑所引起的漏电,该漏电成因异于电池片表面的刮伤。采用波长为1 064和532 nm的激光器作为修复漏电电池片的工具,从隔离槽的绝缘性和切断电池片的PN结所需要的槽深作为研究内容,实验了三种不同的修复方案,通过测试并对比修复前后电池片的电性能参数来探索激光器修复漏电所需要的工艺。实验结果表明:当激光束第二次经过槽内时,可以使槽内残留的硅和金属颗粒完全气化,增加了槽的绝缘性,修复效果优于一次刻槽。为使漏电电池片得到有效的修复,激光刻槽的深度需在30μm以上,而非理论上的几个微米。

Based on the nondestructive testing technology, a method was presented to localize the leakage current of the c-s solar cell that infrared thermograph was used to take a photograph on the surface of the cell to see how the heat was distributing. The optical microscope and SEM could find a new type leakage current which was the cause of dense corrosion pits. Two types of lasers with 1 064 and 532 nm were used to do three difficult kinds of the repair technologies from the insulation and depth of the groove. It could estimate the effect of the repair through the I-V electric performance parameters before and after. The experimental results show that twice groove repair technology can make the residual silicon and metal particles vaporized off completely from the groove. The depth of groove needs more than 30 μm that can remove the leakage from the cell better.