金电极薄膜微应力对InSb芯片性能的影响研究

Study of the Effect of Gold Electrode Thin-film Microstress on Characteristics of InSb Chip

基于锑化铟(InSb)红外探测器的大批量生产,发现电极薄膜微应力会引起器件性能劣化。通过实验设计验证了金电极薄膜微应力对InSb芯片探测率、灵敏度和可靠性的影响。研究了电极薄膜微应力的可恢复性及其作用机理,并提出了控制和优化电极微应力的途径,为从工艺结构上提高红外探测器的性能和可靠性奠定了理论参考和实验基础。

In the mass production of InSb infrared detectors,it is found that the micro-stress in an Au electrode thin-film can result in the performance degradation of InSb devices.Through experimental design,the effect of Au electrode thin-film on the detectivity,sensitivity and reliability of InSb chips is verified.The mechanism and recoverability of the micro-stress in the Au electrode thin film are studied and a way to control and optimize the micro-stress is proposed.The research has laid the theoretical and experimental basis for the improvement of the performance and reliability of infrared detectors in the aspects of process and device structure.