应用使能检测单元的抗辐射数字像素图像传感器

Radiation-tolerant digital pixel image sensor using enable detecting unit

介绍了一种经过抗辐射设计加固的CMOS数字像素图像传感器,并提出了一种可以抵抗单粒子效应的使能检测单元。这个使能检测单元通过将信号传输给三个移位寄存器并判断寄存器输出是否一致来判断和屏蔽单粒子效应。实验结果表明:芯片的最大信噪比和动态范围分别是54.15 d B和56.10 d B,使能检测单元可以屏蔽单粒子效应。

A CMOS digital pixel image sensor using radiation-hardness-by-design method is intoduced. A novel enable detector cell is proposed for single event effects hardening. It is implemented by transmitting a signal through three shift registers,and then single event effect is prevented by detecting whether outputs of the registers are identical. Experimental results show that the maximum signal noise ratio（ SNR） and dynamic range of this chip can reach 54. 15 d B and 56. 10 d B,respectively,and the enable detector can shield single event effects（ SEE）.