摘要
本文提出在氧化铝陶瓷基板上,采用两步溅射铜膜的方法来制备纯铜型陶瓷覆铜板,即先在低氩气压下高能溅射形成Cu氧化物过渡层,再利用高气压下低能量的铜粒子沉积形成均匀的铜层。使用FESEM对其进行微观表征并进行拉脱强度测试,最后利用传统刻蚀方式在覆铜板上进行电路制作并用显微镜观察线路边缘形貌。研究结果表明,采用该工艺制作的陶瓷覆铜板,铜层结构致密、均匀,金属与陶瓷的拉脱强度达到6.2MPa以上,覆铜板能够用常规腐蚀工艺进行光刻腐蚀,工艺兼容性好。具有生产成本低廉,操作简单,制备过程绿色无污染等优点。
A pure copper layer on Al2O3 ceramic CCL was prepared using two-step magnetron sputtering. The substrate was bombarded by high-energy particle under low pressure to form a Cu oxide buffer layer, and then low-energy copper particles were deposited under high-pressure. The layer was characterized by FESEM and its tension strength was tested, and acircuit was etched on the CCL. The results show that the pull-off strength reaches more than 5.2MPa, and the ceramic CCL can be etched through traditional etching process. The ceramic CCL is of high quality with low cost, simple operation, and environmental-friendly.
作者
陈波
王德苗
金浩
CHEN Bo WANG De-miao JIN Hao(College of Information Science & Electronic Engineering, Zhejiang University, Hangzhou 310027, China Zhejiang University Kunshan Innovation Institute, Kunshan 215300, China Suzhou Advanced Vacuum Electronic Equipment Co., Ltd., Kunshan 215300, China)
出处
《真空》
CAS
2016年第5期22-24,共3页
Vacuum
关键词
陶瓷覆铜板
两步溅射
封装材料
氧化铝
ceramic CCL
two-step sputtering
packaging material
Al2O3