摘要
为了得到CsI光阴极在紫外波段的时间弥散特性,使用蒙特卡罗方法对CsI光阴极在紫外光入射情况下的光电发射进行模拟,研究了当阴极厚度为5～45nm、入射紫外光能量为6.8～8.4eV时CsI光阴极出射电子的时间分布。得到了CsI光阴极的时间弥散与紫外光能量和CsI光阴极厚度的关系,发现当CsI光阴极厚度小于30nm的时候,光阴极的时间弥散随紫外光的能量增加而减小,随光阴极厚度的增加而增加。当CsI光阴极厚度大于30nm的时候,光阴极的时间弥散趋于稳定,与紫外光的能量和光阴极的关系较小。
A Monte Carlo model was developed and implemented to calculate the characteristics of ultraviolet ray induced electron emission from a CsI photocathode. Time distributions of emitted electrons were investigated with an incident ultraviolet ray energy ranging from 6.8 to 8. 4 eV and a CsI thickness ranging from 5 to 45 nm. Simulation results indicate that the time dispersion of CsI photocathodes decreases with the incident ultraviolet ray energy and increases with the CsI thickness when the CsI thickness is less than 30 nm. However, when the CsI thickness is larger than 30 nm, the time dispersion of CsI photocathodes has little dependence on the incident ultraviolet ray energy and the CsI thickness.
出处
《半导体光电》
CAS
北大核心
2016年第5期685-687,753,共4页
Semiconductor Optoelectronics
基金
国家重大科学仪器设备开发专项项目(2014YQ230659)
