基于金属背支撑刻蚀技术的柔性AlGaInP/AlGaAs/GaAs三结太阳电池研制

Study on Fabrication of AlGaInP/AlGaAs/GaAs Inverted Triple Junction Solar Cells Using Metal-Backed Etching Technique

对柔性GaAs基太阳电池的制备方法进行研究,报道了一种用于制备柔性倒置生长的AlGaInP/AlGaAs/GaAs三结太阳电池的剥离和转移方法——金属背支撑选择性湿法刻蚀技术。在GaAs/GaInP选择性腐蚀的基础上进行了GaAs衬底层的腐蚀,研究了不同类型和体积比的溶液对GaAs/GaInP/AlInP结构腐蚀的选择特性,最终选用不同配比的H2SO4-H2O2系腐蚀液,获得快速、可控制、重复性好的去除衬底的两步腐蚀法。原子力显微镜测试结果表明,通过此方法能够成功地将电池外延层薄膜转移到Cu衬底上,并且在剥离和转移过程中外延层薄膜没有受到损伤。柔性AlGaInP/AlGaAs/GaAs三结太阳电池的开路电压超过3.4V。

A flexible AlGaInP/AlGaAs/GaAs inverted triple junction solar cell using metal back support and selective wet etching techniques was demonstrated. To remove the GaAs substrate effectively, the etching selectivity of GaAs material over GaInP/AlInP under different types and volume ratio solutions was used. And on the basis of this technique, GaAs substrate was removed completely and a flexible solar cell undamaged was obtained in a fast controllable and repeatable method--two-step etching method--with H2SO4-H2O2 system etching solutions. The surface morphology with etching solutions was investigated using step profiler and atomic force microscopy （AFM）. The results show that the thin film solar cells can be successfully transfered to the Cu substrate, and epitaxial films were not damaged in the process of stripping and transferring. Finally, a flexible A1GaInP/A1GaAs/GaAs inverted triple junction solar cell with a reasonably-high open circuit voltage （Voc） of over 3.4 V was obtained using this technique.