CCD新型遮光层工艺技术研究

Study on Process of Novel Light-shield in CCD

针对内线转移CCD金属铝遮光技术存在的漏光问题,对比了不同难熔金属材料的遮光性能,选择漏光率较低的氮化钛金属作为新型遮光层材料。研究了不同气体配比、不同射频功率和腔体压力对氮化钛刻蚀选择比、条宽控制等参数的影响。通过优化工艺参数,获得了适合于刻蚀氮化钛遮光层的工艺条件。

For the problem of light leak in interline transfer CCD At light-shading technology, the light-shading performance of different refractory metal materials were compared, based on which Titanium nitride with low light-leaking was chosen as the new shading layer material. The effects of different etching gas ratio, RF power and chamber pressure on the parameters such as etching selectivity and stripe width control were researched. By optimizing process parameters, optimal process conditions for TiN light-shield etching were obtained.