摘要
The rapid development of by the device scaling down. encountered difficulties and CMOS technology is driven Classical MOS devices have challenges as scaling down to nanoscale [1], which seriously affects the device performance and limits the further development of CMOS technology. Because of the excellent control over short-channel effects and high current drive capability, novel multi-gate MOS devices have been regarded for years as the most attractive devices to continue the CMOS technology development following ＂Moore＇s law＂ [2]. Among which FinFET, mainly proposed by Hisamoto et al.
The rapid development of CMOS technology is driven by the device scaling down. Classical MOS devices have encountered difficulties and challenges as scaling down to nanoscale [1], which seriously affects the device performance and limits the further development of CMOS technology.Because of the excellent control over short-channel effects and high current drive capability, novel multi-gate
基金
supported in part by the State Key Development Program for Basic Research of China (Grant No. 2016YFA0200404)
