LSI/VLSI设计的一种方法及有关规则

A LSI/VLSI Design Method and Design Rules

本文给出了LSI/VLSI设计的一种方法,对其设计过程中的一个重要环节,即版图的设计规则展开了讨论。文中讨论了积木式布局方案中单元版图的设计方法和应注意的问题,并给出了具有实用价值的三个规则:4μm硅栅CMOS工艺设计规则,标准单元设计规则及宏单元设计规则。

An indispensable step in LSI/VLSI design and the design rules for routing layout are discussed. The rules give minimum spacings (in microns) and maximum densities of layout and routing and specify the basic parameters for perf ormance checking. The integration density will be directly affected by the rules.The design method and some precautions for cells in the building-block approach are discussed. The formations and requirements for cell description are given and three design methods for I/O pins and lead-outs of the cells are analyzed.Three design rules of practical significance are given, one for technological design of 4 micron silicon-gate CMOS and the other two for standard cells and macro cells respectively. They have proved satisfactory in production.