化学气相沉积二硫化钼薄膜的研究进展

The Review of Chemical Vapor Deposition of MoS_2 Films

总结了二硫化钼薄膜的特性及其在力学、光电、润滑和催化性能方面的广泛应用。归纳了目前化学气相沉积(CVD)技术制备二硫化钼薄膜的主要方法,包括钼(或钼化合物)的硫化,钼前驱体与硫前驱体的直接反应和硫化物的热分解。讨论了化学气相沉积制备二硫化钼薄膜工艺中成核剂、基板和前驱体对薄膜生长过程的影响,分析了二硫化钼和其他硫族化合物生成合金,与其它单层二维材料形成异质结构方面的研究现状,并对该领域今后的研究方向进行了展望。

Summarized the properties of molybdenum disulfide （MoS2） films and its wide application in mechanical, optical, lubrication and catalytic fields. We reviewed the main methods of chemical vapor deposition （CVD） techniques for preparing molybdenum disulfide film, including sulfurization of Mo （or molybdenum compound）, direct reaction of molybdenum and sulfur precursor, thermal decomposition of sulfide. We also focused on the effects of the seeding pro- moter, substrate and precursor on the chemical vapor deposition process of MoS2. The formation of other sulfur compounds alloy and two-dimensional material heterojunction structure were also discussed.