改进型Dual-Buck逆变器

Improved Dual-Buck Inverter

在逆变系统中,电路运行的可靠性是拓扑设计需要考虑的主要指标之一。在电路工作过程中,例如直通或者反向恢复过慢等问题会直接影响一个电路工作的可靠性。Dual-Buck逆变器能够在不加死区保护的情况下解决以上的问题。但是较低的电感利用率使得整个系统的体积和重量增大。首先总结了几种传统的Dual-Buck电路拓扑以及一种单电感结构的Dual-Buck逆变器。然后提出了能够改善基于MOSFET逆变器可靠性的方法。新型的方法在保留传统Dual-Buck逆变器高可靠性的基础上解决了电感利用率低的问题,而且相比于之前的单电感Dual-Buck逆变器损耗更小,控制复杂度更低,具有较为实际的应用价值。最后,仿真和实验结果验证了理论分析的正确性。

In an inversion system,high reliability is one of the main targets to design the topology. Someproblems will threaten the reliability of the system,such as the shoot through issue and the failure of reverse recovery.The Dual-Buck inverters can solve the above problems without adding dead time,but the low utilization of theinductance increases the volume and weight of the system. Firstly reviewed the traditional Dual-Buck topologies and asingle inductor Dual-Buck inverter which can make full use of the inductance. Then a method to improve the reliabilityof the MOSFET inverters was proposed. The novel method maintained the Dual-Buck inverter′s advantage of highreliability and can make full use of the inductance. Also,compared to the single inductor Dual-Buck inverter,thenovel method could achieve lower conducting loss and simpler controlling strategy. Finally,the experimental resultsverify the theoretical analysis.