期刊文献+

应用于CMOS图像传感器的Pipelined SAR模数转换器设计 被引量:1

Design of a Pipelined SAR ADC Used in CMOS Image Sensor
下载PDF
导出
摘要 设计实现一种应用于CMOS图像传感器的10bit模数转换器(ADC),采用基于逐次逼近的新型流水线结构(Pipelined SAR ADC).提出了一种优化选取其中高精度倍增数模转换器(MDAC)和单位电容值的解析方法.通过采用第一级高精度、半增益MDAC和动态比较器等技术提高了整体电路的线性度,并降低了系统功耗.通过对版图面积的优化设计,满足了CMOS图像传感器对芯片面积的要求.本设计基于180nm CMOS工艺,仿真结果显示电路实现了60.37dB的信噪失真比(SNDR)和76.37dB的无杂散动态范围(SFDR),有效精度(ENOB)达到了9.74bit.ADC的核心面积仅为140μmⅹ280μm,约为0.04mm2.在2.8V电压下,功耗为9.8mW. This paper presents a novel architecture to achieve a 10 bit pipeline ADC based on SAR technique which is used in a CMOS image sensor. A theoretical analysis is proposed to determine the high resolution MDAC and the suitable value of unit capacitor. The high-resolution first stage, the half-gain MDAC and the dynamic comparator are adopted to improve the linearity and to reduce the power. To satisfy the strict area requirement of CMOS image sensor, the layout is carefully designed. This pipelined SAR ADC is designed and fabricated in SMIC 180 nm CMOS technology. Simulation results show the ADC achieves 60. 37 dB signal to noise distortion ratio (SNDR) and 76.37 dB spurious free dynamic range(SFDR). The effective number of bits (ENOB) achieves 9. 74 bit. The core area is 140μm×280μm, about 0. 04 mm2. The power dissipation is 9. 8 mW in typical case under 2. 8 V supply.
作者 李臻 李冬梅
出处 《微电子学与计算机》 CSCD 北大核心 2016年第11期64-68,共5页 Microelectronics & Computer
基金 国家自然科学基金项目(61171001) 深圳市知识创新计划项目(JCYJ20140419122040609)
关键词 逐次逼近 流水线模数转换器 半增益MDAC 动态锁存比较器 低功耗 小面积 SAR pipeline ADC half-gain MDAC dynamic latch comparator low power small area
  • 相关文献

参考文献7

  • 1Xue F, Wei X, Hu Y, et al. Design of a 10-bit 50MSPS pipeline AEC for CMOS image sensor[C] ff Industrial Electronics and Applications (ICIEA), 2014 IEEE 9th Conference on. [s. 1. ]: IEEE, 2014: 891-895.
  • 2Lee B G, Min B M, Manganaro G, et al. A 14b 100MS/s pipelined ADC with a merged active S/H and first MDAC[C] // Solid-State Circuits Confer- ence, Digest of Technical Papers IEEE International. Boston: IEEE, 2012 : 248-611.
  • 3Wang Q, Zhou L, Peng Z, et al. A 12-b 100MS/s low-power successive approximation register ADC in 65 nm COMS[C]// Electron Devices and Solid-State Circuits (EDSSC), 2014 IEEE International Confer- ence on. BerLin: IEEE, 2004 : 1-2.
  • 4Yang W, Kelly D, Mehr I, et al. A 3-V 340-mW 14-b 75-Msample/s CMOS ADC with 85-d.B SFDR at Nyquist input[J]. Solid-State Circuits, IEEE Journal of, 2010,36(12): 1931-1936.
  • 5Lee C C, Flynn M P. A SAR-assisted two-stage pipe- line ADC[J]. Solid-State Circuits, IEEE Journal of, 2011,46(4) : 859-869.
  • 6Chan C H, Zhu Y, Chio U, et al. A reconfigurable low-noise dynamic comparator with offset calibration in 90 nm CMOS[C] // Solid State Circuits Conference (A-SSCC), 2011 IEEE Asian. IEEE, 2011..233-236.
  • 7李臻.CMOS图像传感器中的10位PipelinedSARADC研究与设计[D].北京:清华大学,2016.

同被引文献2

引证文献1

二级引证文献2

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部