氢化非晶硅薄膜的制备与工艺参数优化

Preparation and Process Parameters Optimization of Hydrogenated Amorphous Silicon Thin Film

采用间接型射频等离子体增强化学气相沉积方法,通过改变H_2/SiH_4气流量比、工艺功率和工艺压强,制备出了氢化非晶硅薄膜。研究了H_2/SiH_4气流量比、工艺功率以及工艺压强对非晶硅薄膜光学特性的影响。实验结果表明,该方法可以制备出氢化非晶硅薄膜,且通过改变实验条件,可以改变薄膜微观结构及成分;随着H_2/SiH_4气流量比的增加,SiH化合物含量增加,多氢化合物含量降低;适当增加射频功率,可以提高薄膜表面的均匀性,同时,功率的增加会使氢含量增加;此外,薄膜表面氢含量随工艺气压的降低而减小。

A kind of hydrogenated amorphous silicon thin film was prepared with an indirect ratio frequency plasma enhanced chemical vapor deposition method by changing H_2/SiH_4 gas flow ratio,procedure power and procedure pressure respectively.The effects of H_2/SiH_4 gas flow ratio,procedure power and procedure pressure on a-Si∶H thin film optical properties were also studied.The results showed that a-Si∶H thin film could be prepared by this method.The film microstructure and compositions changed when the experimental conditions changed.With the H_2/SiH_4 gas flow ratio increasing,SiH compounds increased and poly-hydrides gradually reduced.Thin film uniformity and H content could be improved by increasing the RF power properly.In addition,H content on thin film surface decreased with the decreasing of procedure pressure.