1200V沟槽栅场截止型IGBT终端设计

Design of a 1 200VTrench Gate Field Stop IGBT Terminal

利用二维半导体工艺及器件模拟工具,从结掺杂浓度、P阱与P环间距、P环尺寸控制3个方面分析了半绝缘多晶硅终端结构的击穿电压,提出了应用于1 200V沟槽栅场截止型IGBT的终端解决方案。从结的深度和终端长度两方面,将SIPOS终端技术与标准的场环场板终端技术进行了对比。结果表明,采用SIPOS终端结构并结合降低表面场技术,使得终端尺寸有效减小了58%,并且,采用SIPOS技术的终端区域击穿电压受结深的影响较小,有利于实际制造工艺的控制和IGBT器件稳定性的提升。

A 1 200 V trench gate field stop IGBT terminal was designed by using the semi-insulating polycrystalline silicon（SIPOS）based termination technique.The proposed solution had been applied to a 1 200 V structure,and the impact on the breakdown voltage had been evaluated by means of 2D TCAD simulations.The influences of the junction doping concentration,the distance between P well and P ring,and the P ring size on breakdown voltage were explored.The comparison of the SIPOS terminal technology with the standard field ring add field plate（FRFP）terminal technology was explored in the two aspects of junction depth and terminal length.The results showed that the SIPOS terminal structure combined with reduced surface field（RESURF）technology could effectively reduce the terminal size by 58%,and the junction depth had less influence on the breakdown voltage around the terminal area.It＇s conducive to the actual process control and better for improving the stability of IGBT power device.