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Electron localization in ultrathin films of three-dimensional topological insulators

Electron localization in ultrathin films of three-dimensional topological insulators
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摘要 The recent discovery of three-dimensional(3D) topological insulators(TIs) has provided a fertile ground for obtaining further insights into electron localization in condensed matter systems.In the past few years,a tremendous amount of research effort has been devoted to investigate electron transport properties of 3D TIs and their low dimensional structures in a wide range of disorder strength,covering transport regimes from weak antilocalization to strong localization.The knowledge gained from these studies not only offers sensitive means to probe the surface states of 3D TIs but also forms a basis for exploring novel topological phases.In this article,we briefly review the main experimental progress in the study of the localization in 3D TIs,with a focus on the latest results on ultrathin TI films.Some new transport data will also be presented in order to complement those reported previously in the literature. The recent discovery of three-dimensional(3D) topological insulators(TIs) has provided a fertile ground for obtaining further insights into electron localization in condensed matter systems.In the past few years,a tremendous amount of research effort has been devoted to investigate electron transport properties of 3D TIs and their low dimensional structures in a wide range of disorder strength,covering transport regimes from weak antilocalization to strong localization.The knowledge gained from these studies not only offers sensitive means to probe the surface states of 3D TIs but also forms a basis for exploring novel topological phases.In this article,we briefly review the main experimental progress in the study of the localization in 3D TIs,with a focus on the latest results on ultrathin TI films.Some new transport data will also be presented in order to complement those reported previously in the literature.
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2016年第11期19-25,共7页 中国物理B(英文版)
基金 Project supported by the National Basic Research Program of China(Grant Nos.2012CB921703 and 2015CB921102) the National Natural Science Foundation of China(Grant Nos.61425015,11374337,and 91121003) the Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDB070202)
关键词 topological localization devoted covering complement Electron briefly tremendous crossover coherent topological localization devoted covering complement Electron briefly tremendous crossover coherent
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