摘要
Graphene is an alternative material for photodetectors owing to its unique properties.These include its uniform absorption of light from ultraviolet to infrared and its ultrahigh mobility for both electrons and holes.Unfortunately,due to the low absorption of light,the photoresponsivity of graphene-based photodetectors is usually low,only a few milliamps per watt.In this letter,we fabricate a waveguide-integrated graphene photodetector.A photoresponsivity exceeding0.11 A·W （-1） is obtained which enables most optoelectronic applications.The dominating mechanism of photoresponse is investigated and is attributed to the photo-induced bolometric effect.Theoretical calculation shows that the bolometric photoresponsivity is 4.6 A·W （-1）.The absorption coefficient of the device is estimated to be 0.27 dB·μm （-1）.
Graphene is an alternative material for photodetectors owing to its unique properties.These include its uniform absorption of light from ultraviolet to infrared and its ultrahigh mobility for both electrons and holes.Unfortunately,due to the low absorption of light,the photoresponsivity of graphene-based photodetectors is usually low,only a few milliamps per watt.In this letter,we fabricate a waveguide-integrated graphene photodetector.A photoresponsivity exceeding0.11 A·W （-1） is obtained which enables most optoelectronic applications.The dominating mechanism of photoresponse is investigated and is attributed to the photo-induced bolometric effect.Theoretical calculation shows that the bolometric photoresponsivity is 4.6 A·W （-1）.The absorption coefficient of the device is estimated to be 0.27 dB·μm （-1）.
基金
Project supported by the National Key Research and Development Program of China(Grant No.2016YFB0402204)
the High-Tech Research and Development Program of China(Grant Nos.2013AA031401,2015AA016902,and 2015AA016904)
the National Natural Science Foundation of China(Grant Nos.61674136,61176053,61274069,and 61435002)
