面阵Si-基CCD串音干扰实验研究

Experimental Research on Jamming and Crosstalk of Array Si-CCD Caused by Laser

电荷耦合器件(CCD)受强激光照射时,会出现干扰、饱和及串音现象。在现代光电对抗中,正是利用这些特性对CCD造成软损伤,进而对目标起到防护的作用。主要针对632.8nm激光辐照面阵Si基CCD时产生的饱和、干扰及串音现象进行了相关研究。搭建了实验系统,获取了实验数据;在对实验数据作深入分析和研究的基础上,总结了串音区域和干扰区域面积与辐照激光功率之间的关系,根据此关系拟合计算出了干扰阈值为0.57W/cm^2和串音阈值为8.26W/cm^2;最后将拟合出的CCD参数与实际CCD的参数作了比较,误差为2%。拟合结果证明本文所提出的干扰模型是合理的,能够很好地用于面阵CCD实际干扰效果评估和预测。

When a CCD detector is radiated by a laser, saturation and crosstalk will be caused on the image plane of the CCD. At present, some targets can be protected by using these physics effects in optoelectronic countermeasures. These effects that occur when an array Si-CCD is radiated by a 632. 8nm laser are studied in this paper. The relationship between the jamming area ＆ the crosstalk area and the incident laser power is extracted on the basis of analyzing a great deal of data. Then by data fitting, the saturation threshold and crosstalk threshold are both calculated. At last, the dimension of the CCD is calculated. There is only an error of 2% between the fitting parameter and the practical parameter of CCD. The calculating results show that the proposed model is reasonable and can be used to esti- mate the effects of the CCD radiated by the laser.