碳化硅金属氧化物半导体场效应晶体管短路特性

Short-circuit Characterization of SiC MOSFET

器件的短路能力对整流器及其故障保护具有极其重要的意义。当器件故障运行时,为避免器件损坏,须在最短的时间内将故障予以切除,而此时器件的最大短路运行时间为系统保护装置提供了有力的时间支持。主要研究了碳化硅金属氧化物半导体场效应晶体管(Si C MOSFET)在短路条件下的运行能力,以Cree公司的1 200 V/19 A Si C MOSFET为模型,设计了硬件电路,测试其不同电压等级下的短路电流;并在直流电压等级为600 V的条件下,测试了不同栅极电压、不同温度工况下的短路电流。研究结果表明器件的短路峰值电流随着栅极电压的升高而增大,而其短路运行时间却大幅降低;温度对短路运行时间的影响则相对不甚明显;同时还给出了器件在不同工况下的最大短路运行时间Tsc(max)。

The short-circuit capacity of semiconductor devices is critical to converter and protection appliance. With running in abnormal condition, the fault must be cut off as soon as possible so as to prevent the devices undergo catastrophic breakdown, so the maximum short-circuit running time of the device provides a powerful time support for the system protection design. In this paper, the operational capability of silicon carbide metal oxide semiconductor field effect transistor （SiC M0SFET） under short-circuit conditions is investigated. Based on the model of 1 200 V/19 A SiC M0SFET fabricated by Cree（C2M0160120D）, the hardware circuit is designed, and the short-circuit current under different voltage levels is tested. At the same time, the short-circuit current is also tested under different gate-source voltages and different temperatures when the DC voltage level is 600 V. The results show that the short-circuit peak current increases with the increasing of gate-source voltages, instead, the short-circuit running time of the device decreases apparently, and the temperature does not have much impact on !sc. At last, this paper also gives the maximum short-circuit duration time of the device.