摘要
The influence of ultrasonic loading on reverse current-voltage characteristics of Mo/n-n＋-Si structures has been investigated. The research of leakage current variation has been carried out for various ultrasonic wave frequencies （4.1 and 8.4 MHz）, intensities （up to 0.8 W/cm2） and loading temperatures （130-330 K）. The observed reversible acoustically induced increase in reverse currents was as large as 60%. It has been found that dominant charge transfer mechanisms are the thermionic emission （at high temperature） and the phonon-assisted tunneling （at low temperature）. The ultrasound loading affects both processes due to the decrease of Schottky barrier height and binding energy of the electron on the trap.
The influence of ultrasonic loading on reverse current-voltage characteristics of Mo/n-n＋-Si structures has been investigated. The research of leakage current variation has been carried out for various ultrasonic wave frequencies （4.1 and 8.4 MHz）, intensities （up to 0.8 W/cm2） and loading temperatures （130-330 K）. The observed reversible acoustically induced increase in reverse currents was as large as 60%. It has been found that dominant charge transfer mechanisms are the thermionic emission （at high temperature） and the phonon-assisted tunneling （at low temperature）. The ultrasound loading affects both processes due to the decrease of Schottky barrier height and binding energy of the electron on the trap.
