摘要
Combining the self-stimulated Raman scattering technology and saturable absorber of Cr^(4+):YAG, a 1.17 μm c-cut Nd:GdVO_4 picosecond Q-switched laser is demonstrated in this paper. With an incident pump power of 10 W, the Q-switched laser with average power of 430 mW for 1.17 μm, pulse width of 270 ps, repetition rate of 13 kHz and the first order Stokes conversion efficiency of 4.3% is obtained. The Q-switched pulse width can be the narrowest in our research. In addition, the yellow laser at 0.58 μm is also achieved by using the LiB_3O_5 frequency doubling crystal.
Combining the self-stimulated Raman scattering technology and saturable absorber of Cr^4＋：YAG, a 1.17 μm c-cut Nd：GdVO4 picosecond Q-switched laser is demonstrated in this paper. With an incident pump power of 10 W, the Q-switched laser with average power of 430 mW for 1.17 μm, pulse width of 270 ps, repetition rate of 13 kHz and the first order Stokes conversion efficiency of 4.3% is obtained. The Q-switched pulse width can be the narrowest in our research. In addition, the yellow laser at 0.58 μm is also achieved by using the LiB3O5 frequency doubling crystal.
基金
supported by the National Natural Science Foundation of China(No.61108021)
the Fundamental Research Funds for the Central Universities(Nos.2013JBM091 and S16JB00010)
