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Optimizing ef?ciency of polycrystalline p-Si anode organic light-emitting diode 被引量:1

Optimizing ef?ciency of polycrystalline p-Si anode organic light-emitting diode
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摘要 Optimizing efficiency of organic light-emitting diodes(OLEDs) with a structure of Al/glass/nanometerthick polycrystalline p-Si(NPPS) anode/SiO_2/N'-bis-(1-naphthl)-diphenyl-1,1'-biphenyl-4,4'-diamine(NPB)/tris(8-hydroxyquinoline) aluminum(Alq_3)/4,7-diphenyl^(-1),10-phenanthroline(BPhen):Cs_2CO_3/Sm/Au were studied. The NPPS anodes were fabricated by magnetron sputtering(MS)Si and Ni layers followed by Ni-induced crystallization of the amorphous Si layers. By adjusting the resistivity of the p-Si target adopted in MS, the electroluminescent efficiency of the OLED was optimized. When the resistivity of the p-Si target is 0.01 Ω·cm, the current and power efficiency of the NPPS anode OLED reach maximum values of 6.7 cd ·A^(-1)and 4.64 lm ·W^(-1), respectively, which are 2.7 and 3.1 times those of the resistivity-optimized bulk p-Si anode counterpart and 2.9 and 3.7 times those of the indium tin oxide(ITO) anode counterpart, and then, the physical reasons were discussed. Optimizing efficiency of organic light-emitting diodes(OLEDs) with a structure of Al/glass/nanometerthick polycrystalline p-Si(NPPS) anode/SiO_2/N'-bis-(1-naphthl)-diphenyl-1,1'-biphenyl-4,4'-diamine(NPB)/tris(8-hydroxyquinoline) aluminum(Alq_3)/4,7-diphenyl^(-1),10-phenanthroline(BPhen):Cs_2CO_3/Sm/Au were studied. The NPPS anodes were fabricated by magnetron sputtering(MS)Si and Ni layers followed by Ni-induced crystallization of the amorphous Si layers. By adjusting the resistivity of the p-Si target adopted in MS, the electroluminescent efficiency of the OLED was optimized. When the resistivity of the p-Si target is 0.01 Ω·cm, the current and power efficiency of the NPPS anode OLED reach maximum values of 6.7 cd ·A^(-1)and 4.64 lm ·W^(-1), respectively, which are 2.7 and 3.1 times those of the resistivity-optimized bulk p-Si anode counterpart and 2.9 and 3.7 times those of the indium tin oxide(ITO) anode counterpart, and then, the physical reasons were discussed.
出处 《Rare Metals》 SCIE EI CAS CSCD 2016年第11期826-830,共5页 稀有金属(英文版)
基金 financially supported by the National Natural Science Foundation of China (Nos. 50732001, 10674012, 10874001, and 60877022) the National Basic Research Program of China (No. 2007CB613402)
关键词 Organic light-emitting diode Polycrystallinep-Si Magnetron sputtering ELECTROLUMINESCENCE Organic light-emitting diode Polycrystallinep-Si Magnetron sputtering Electroluminescence
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