Flash存储器中负压电荷泵的研究与设计

Design of Negative Charge Pump for Flash Memory

本文提出了一种适用于单电源,低电压供电的Flash存储器的负压电荷泵实现方法.在分析电荷泵工作原理的基础上,结合NOR Flash存储器电路系统对该负电压的要求,提出了用于抑制编程串扰的负压电荷泵电路结构,并详细分析其工作原理.最后针对不同工艺角、电源电压和温度对该电路进行系统的仿真验证,结果显示对于上述各情形该电荷泵系统均可以在2μs内稳定输出-300mV的电压,达到设计要求.

This paper proposes a method for the implementation of a negative voltage charge pump in Flash memories, which is suitable for use with single power supply and low voltage power supply. Based on the principles of the operations of charge pumps and taking into consideration the various requirements of NOR flash memories for negative voltage, we propose a negative charge pump circuit structure which effectively inhibits program disturb. The paper concludes with circuit simulations at different PVT corners which indicate that the charge pump outputs voltage at -300mV within 2μs upon system power up, satisfying design requirements.