InGaN基发光二极管和激光二极管(英文)

InGaN-based Light-Emitting Diodes and Laser Diodes

在InGaN发光二极管中 ,尽管存在着大量的位错 ,但其效率还是相当高的。用InGaN作为有源层是很重要的。在InGaN基LED的情况下 ,为产生光发射需要较高的激发功率。横向大面积外延生长的GaN激光二极管 (LDs)是在厚的GaN衬底上外延制备成的。在温度 2 5 0℃、30mW输出的连续工作状态下 ,其工作电流小于 4 2mA ,6 0 0℃、30mW输出的连续工作状态下的寿命约为1 5 0 0 0小时。这些结果表明 ,螺旋位错密度的降低延长了激光二极管的寿命。此外 ,良好的散热也是很重要的。

In spite of large number of dislocations, the efficiency of the InGaN based lig ht emitting diodes (LEDs) are high enough. It is important to use InGaN as an a ctive layer. In InGaN LEDs, higher power is needed to be used for general light ing. Laser diodes (LDs) grown on epitaxially laterally overgrown GaN (ELOG), free standing GaN, and ELOG grown on thick GaN substrate were fabricated. The LD gr own on the ELOG grown on thick GaN substrate showed an operating current as low as 42mA under CW 30mW operation and a case temperature of 25℃, and exhibite d an estimated lifetime of 15 000h under CW 30mW operation and case temperat ure of 60℃. These results show that reducing the threading dislocation density extends the lifetime of LD. In addition, it is important to make heat dissipat ion better.