在ELO-GaN衬底上生长的AlGaInN高功率激光器(英文)

AlGaInN High Power Lasers Grown on ELO-GaN

在ELO GaN基层上用激光进行条状化处理 ,可以明显地改善AlGaInN激光二极管的位错密度和界面的粗糙度。其结果是可使激光二极管的寿命 ,在 5 0℃ ,30mW输出的连续工作条件下超过 1 0 0 0小时。

Dislocation densit y and facet roughness of AlGaInN laser diodes were improved significantly by mak ing the laser stripes just above the laterally grown regions of ELO GaN basal l ayer. As a result, the lifetime of the laser diodes was demonstrated to be more than thousand hours under 30mW CW operation at 50℃.