期刊文献+

无黏结相PCD和PCBN材料研究进展 被引量:1

Research progress on binderless PCD and PCBN materials
下载PDF
导出
摘要 无黏结相PCD和PCBN具有良好的高温性能,特别是拥有纳米晶粒或纳米结构的PCD和PCBN的性能甚至高于单晶体的性能。对无黏结相聚晶立方氮化硼(PCBN)和聚晶金刚石(PCD)材料的合成方法、烧结机理及其性能进行了详细概述。在高于7GPa和1800℃下,能烧结出致密的无黏结相PCD和PCBN材料,但不同原材料粉末和微量触媒或掺杂会对超高压高温(HPHT)烧结条件和机理产生较大的影响。基于HPHT方法的制备条件较苛刻,PVD和CVD是比较有前途的制备PCD的方法,但用于制备PCBN还需要解决许多技术问题。 The preparation method,sintering mechanisms,methods for improving their sintering behavior,and their properties for binderless polycrystalline cubic boron nitride(PCBN)and polycrystalline diamond(PCD)materials have been summarized and discussed.The dense binderless PCD and PCBN materials can be successfully sintered at the pressure and temperature of above 7GPa and 1800 ℃,but the high-pressurehigh-temperature(HPHT)sintering condition and mechanisms of PCD and PCBN will be strongly affected by the different start powers and micro catalyst or dopant.The physical vapor deposition(PVD)and chemical vapor deposition(CVD)are promising methods for preparing binderless PCD material because of the severe sintering condition for HPHT method,but many technical problems must be solved while using PVD and CVD to prepare binderless PCBN material.The binderless PCD and PCBN materials have excellent high temperature properties,especially that the properties of PCD and PCBN with nano-size grains or substructures are higher than those of single crystal.
作者 张太全
出处 《金刚石与磨料磨具工程》 CAS 2016年第5期79-83,共5页 Diamond & Abrasives Engineering
基金 福建省科技重大专项"高性能复合材料加工刀具开发"(2012HZ0001-1)
关键词 高温高压 烧结机理 无结合剂 化学气相沉积 物理气相沉积 high-temperature & high-pressure sintering mechanism bindeless chemical vapor deposition physical vapor deposition
  • 相关文献

参考文献1

二级参考文献22

  • 1贺端威,王福龙,寇自力.用于产生超高压的新型装置[P].中国专利(专利号:ZL200710048839.2).
  • 2F P Bundy, H T Hall, H M Strong. R H Wentorf Jun 1955 Na- ture 176 51.
  • 3Hitoshi Sumiya. Tetsuo Irifne 2008 SEI Technicl Review 66 52.
  • 4H Sumiya. T Irifune 2004 Diamond Relat. Mater. 13 1771.
  • 5Paul S DeCarli. John C Jamieson 1961 Science 133 1821.
  • 6H Yusa, K Takemura, Y Matsui, H Morishima, K Watanabc, H Yamawaki. K Aoki 1998 Appl. Phys. Let 72 1843.
  • 7H Yusa 2002 Diamond Relat. Mater. 11 87.
  • 8F P Bundy 1963 J. chem. Phys. 46 3437.
  • 9Masao Wakatsuki, Kazuaki Ichinose. Toshio Aoki 1972 Jpn. J. Appl. Phys. 11 578.
  • 10S Naka, K Horii, Y Takeda, T Hanawa, 1976 Nature 259 38.

共引文献8

同被引文献7

引证文献1

二级引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部