Fe_3O_4-Si侧向光伏特性的研究

STUDY ON LATERAL PHOTOVOLTAIC PROPERITIES IN Fe_3O_4-Si STRUCTURE

文章介绍利用脉冲激光沉积技术在单晶(100)Si衬底上生长出高质量的Fe3O4择优取向(111)薄膜,并对其侧向光伏特性作了详细研究,尤其是侧向光伏电压的位置关系及其与薄膜厚度、激光的功率的关系.实验结果表明,Fe3O4(20nm)-Si结构的侧向光伏电压值最大,其位置灵敏度高达26.32mV·mm-1,而且出现垂直位移的情况下,其位置灵敏度在减小,对应着非线性度也增大;Fe3O4薄膜厚度的增大不利于提高其位置灵敏度,但激光功率的增大有助于增大其位置灵敏度.

We have grown a（111）Fe3O4thin film with good quality in the single crystal（100）Si substrate using pulsed laser deposition technology（PLD）and investigated the lateral photo-voltaic properties（LPE）at room temperature,especially the relationship between lateral photo-voltage and the laser-spot position,and the dependence on the film thickness,laser power.It＇s found that the largest LPE were observed in Fe3O4（20nm）-Si Schottky junction.The dependence of LPE on position shows very highly sensitivity of 26.32mV·mm-1 as well as good linearity.It＇s also found that the vertical displacement and improving the thickness of Fe3O4 film can decrease the sensitivity and increase its nonlinearity.However,the increase of laser power helps to increase its sensitivity in Fe3O4-Si structure.